POSITRON STOPPING PROFILES IN MULTILAYERED SYSTEMS

被引：24

作者：

AERS, GC

机构：

[1] National Research Council of Canada, Ottawa, Ont. K1A0R6, Montreal Road

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 03期

关键词：

D O I：

10.1063/1.357742

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that the results of lengthy Monte Carlo simulations for positron stopping profiles in multilayer systems can be reproduced accurately in the incident energy range 1-25 keV using a simple scaling model. This model takes into account the variation of mean implantation depth between layers and the backscattering effects of interfaces and represents a computation time saving of several orders of magnitude. This development is a significant step in the effort to make detailed multilayer defect profiling with positrons a practical possibility.

引用

页码：1622 / 1632

页数：11

共 31 条

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