POSITRON STOPPING PROFILES IN MULTILAYERED SYSTEMS

被引：24
作者：
AERS, GC
机构：
[1] National Research Council of Canada, Ottawa, Ont. K1A0R6, Montreal Road
来源：
JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 03期
关键词：
D O I：
10.1063/1.357742
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is shown that the results of lengthy Monte Carlo simulations for positron stopping profiles in multilayer systems can be reproduced accurately in the incident energy range 1-25 keV using a simple scaling model. This model takes into account the variation of mean implantation depth between layers and the backscattering effects of interfaces and represents a computation time saving of several orders of magnitude. This development is a significant step in the effort to make detailed multilayer defect profiling with positrons a practical possibility.
引用
收藏
页码：1622 / 1632
页数：11
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