LOW-TEMPERATURE HALL COEFFICIENT AND CONDUCTIVITY IN HEAVILY DOPED SILICON

被引：48
|
作者：
SWARTZ, GA
机构：
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1960年 / 12卷 / 3-4期
关键词：
D O I：
10.1016/0022-3697(60)90046-9
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：245 / 259
页数：15
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