ELECTRONIC TRANSPORT IN ION-BOMBARDED AMORPHOUS-SILICON

被引：8

作者：

PFEILSTICKER, R

KALBITZER, S

MULLER, G

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1981年 / 182卷 / APR期

关键词：

D O I：

10.1016/0029-554X(81)90784-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：603 / 608

页数：6

共 17 条

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[2]

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BEYER, W ;

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[4] DENSITIES OF AMORPHOUS SI FILMS BY NUCLEAR BACKSCATTERING [J].

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KAPLAN, D ;

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[5]

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[6] CONDUCTIVITY AND THERMOELECTRIC-POWER OF AMORPHOUS-GERMANIUM AND AMORPHOUS SILICON [J].

LEWIS, AJ .

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[7]

MADELUNG O, 1970, GRUNDLAGEN HALBLEITE, P100

[8]

Mott N. F., 1968, Journal of Non-Crystalline Solids, V1, P1, DOI 10.1016/0022-3093(68)90002-1

[9]

MOTT NF, 1979, ELECT PROCESSES NONC, P52

[10] THE CRYSTALLINE-TO-AMORPHOUS TRANSITION IN ION-BOMBARDED SILICON [J].

MULLER, G ;

KALBITZER, S .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (03) :307-325

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