ELECTRONIC TRANSPORT IN ION-BOMBARDED AMORPHOUS-SILICON

被引：8
|
作者：
PFEILSTICKER, R
KALBITZER, S
MULLER, G
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS | 1981年 / 182卷 / APR期
关键词：
D O I：
10.1016/0029-554X(81)90784-9
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：603 / 608
页数：6
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