INVESTIGATION OF NONIDEAL SILICON GALLIUM-ARSENIDE HETEROJUNCTIONS BY DEEP LEVEL TRANSIENT SPECTROSCOPY

被引：0

作者：

EROSHKIN, AV

LAKTYUSHKIN, VN

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1988年 / 22卷 / 09期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1013 / 1016

页数：4

共 8 条

[1] CARRIER DENSITY DISTRIBUTION IN MODULATION DOPED GAAS-ALXGA1-XAS QUANTUM WELL HETEROSTRUCTURES [J].

HSIEH, TC ;

HESS, K ;

COLEMAN, JJ ;

DAPKUS, PD .

SOLID-STATE ELECTRONICS, 1983, 26 (12) :1173-1176

[2] HETEROJUNCTION INTERFACE FORMATION - SI ON GE, GAAS, AND CDS [J].

KATNANI, AD ;

STOFFEL, NG ;

DANIELS, RR ;

ZHAO, TX ;

MARGARITONDO, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :692-694

[3] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[4] TRANSIENT CAPACITANCE SPECTROSCOPY ON LARGE QUANTUM WELL HETEROSTRUCTURES [J].

MARTIN, PA ;

MEEHAN, K ;

GAVRILOVIC, P ;

HESS, K ;

HOLONYAK, N ;

COLEMAN, JJ .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4689-4691

[5] SEMICONDUCTOR HETEROJUNCTION TOPICS - INTRODUCTION AND OVERVIEW [J].

MILNES, AG .

SOLID-STATE ELECTRONICS, 1986, 29 (02) :99-121

[6]

Sharma B. L., 1974, SEMICONDUCTOR HETERO

[7] ORIGIN OF U-SHAPED BACKGROUND DENSITY OF INTERFACE STATES AT NON-LATTICE MATCHED SEMICONDUCTOR INTERFACES [J].

SINGH, J ;

MADHUKAR, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :437-442

[8]

SZE SM, 1981, PHYSICS SEMICONDUCTO

← 1 →