ZINC IMPLANTATION IN GALLIUM-PHOSPHIDE

被引：2

作者：

OHNUKI, Y ^{[1
]}

INADA, T ^{[1
]}

机构：

[1] HOSEI UNIV,COLL ENGN,KOGANEI,TOKYO 184,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS | 1981年 / 182卷 / APR期

关键词：

D O I：

10.1016/0029-554X(81)90791-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：647 / 654

页数：8

共 18 条

[11] CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE - ENCAPSULANT LAYERS FOR ANNEALING GALLIUM-ARSENIDE [J].

INADA, T ;

OHKUBO, T ;

SAWADA, S ;

HARA, T ;

NAKAJIMA, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) :1525-1529

[12] PULSED ELECTRON-BEAM ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE [J].

INADA, T ;

TOKUNAGA, K ;

TAKA, S .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :546-548

[13] MAGNESIUM AND ZINC ION-IMPLANTATION INTO SULFUR-DOPED GAP [J].

INADA, T ;

OHNUKI, Y .

APPLIED PHYSICS LETTERS, 1974, 25 (04) :228-230

[14] ANNEALING OF SE-IMPLANTED GAAS WITH AN OXYGEN-FREE CVD SI3N4 ENCAPSULANT [J].

INADA, T ;

MIWA, H ;

KATO, S ;

KOBAYASHI, E ;

HARA, T ;

MIHARA, M .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (08) :4571-4573

[15]

INADA T, 1978, J APPL PHYS, V50, P6000

[16]

INADA T, 1975, ION IMPLANTATION SEM, P107

[17] ELECTRICAL PROFILES OF MAGNESIUM-ION-IMPLANTED GAP [J].

LANK, DJ ;

DOBBS, BC ;

PARK, YS .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1318-1324

[18] AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T) [J].

SZE, SM ;

GIBBONS, G .

APPLIED PHYSICS LETTERS, 1966, 8 (05) :111-&

← 1 2 →