ZINC IMPLANTATION IN GALLIUM-PHOSPHIDE

被引：2

作者：

OHNUKI, Y ^{[1
]}

INADA, T ^{[1
]}

机构：

[1] HOSEI UNIV,COLL ENGN,KOGANEI,TOKYO 184,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS | 1981年 / 182卷 / APR期

关键词：

D O I：

10.1016/0029-554X(81)90791-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：647 / 654

页数：8

共 18 条

[1] ION-IMPLANTED GALLIUM-ARSENIDE-PHOSPHIDE SURFACES [J].

ARNOLDUSSEN, TC ;

GREENSTEIN, E .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) :1102-1106

[2] ZINC ION-IMPLANTATION AS A PREDEPOSITION PROCESS IN GALLIUM-ARSENIDE [J].

BOISSY, MC ;

DIGUET, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) :1505-1509

[3] VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP [J].

CASEY, HC ;

ERMANIS, F ;

WOLFSTIRN, KB .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) :2945-+

[4]

CHANG LL, 1964, J APPL PHYS, V35, P375

[5] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC [J].

DONNELLY, JP ;

LINDLEY, WT ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1975, 27 (01) :41-43

[6] SELENIUM IMPLANTATION IN GAAS [J].

GAMO, K ;

INADA, T ;

KREKELER, S ;

MAYER, JW ;

EISEN, FH ;

WELCH, BM .

SOLID-STATE ELECTRONICS, 1977, 20 (03) :213-217

[7] ELECTRICAL AND ELECTROLUMINESCENT PROPERTIES OF GALLIUM PHOSPHIDE DIFFUSED P-N JUNCTIONS [J].

GERSHENZON, M ;

LOGAN, RA ;

NELSON, DF .

PHYSICAL REVIEW, 1966, 149 (02) :580-+

[8]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[9] LOW-NOISE GAAS FETS PREPARED BY ION-IMPLANTATION [J].

HIGGINS, JA ;

KUVAS, RL ;

EISEN, FH ;

CHEN, DR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) :587-596

[10] ANODIC-OXIDATION OF GAP IN N-METHYLACETAMIDE FOR ELECTRICAL PROFILING OF ION-IMPLANTED GAP [J].

INADA, T ;

OHNUKI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :68-74

← 1 2 →