Temperature dependence of contact resistance of Au-Ti-Pd2Si-n(+)-Si ohmic contacts

被引：0

作者：

Belyaev, A. E. ^{[1
]}

Boltovets, N. S. ^{[2
]}

Konakova, R. V. ^{[1
]}

Kudryk, Ya. Ya. ^{[1
]}

Sachenko, A. V. ^{[1
]}

Sheremet, V. N.

机构：

[1] NAS Ukraine, V Lashkaryov Inst Semicond Phys, 41 Prospect Nauky, UA-03028 Kiev, Ukraine

[2] State Enterprise Res Inst Orion, UA-03057 Kiev, Ukraine

来源：

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2010年 / 13卷 / 04期

关键词：

wide-gap semiconductor; ohmic contact; contact resistance;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigated temperature dependence of contact resistance of an Au-Ti-Pd2Si ohmic contact to heavily doped n(+)-Si. The contact resistance increases with temperature owing to conduction through the metal shunts. In this case, the limiting process is diffusion input of electrons to the metal shunts. The proposed mechanism of contact resistance formation seems to realize also in the case of wide-gap semiconductors with high concentration of surface states and dislocation density in the contact.

引用

页码：436 / 438

页数：3

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