ANALYTICAL MODELING OF THE MOS-TRANSISTOR

被引：36
作者：
GHIBAUDO, G [1 ]
机构：
[1] SACHS & FREEMAN ASSOCIATES INC,LANDOVER,MD 20785
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 113卷 / 01期
关键词：
D O I：
10.1002/pssa.2211130127
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：223 / 240
页数：18
相关论文
共 34 条
[1]   THRESHOLD VOLTAGE MODELS OF SHORT, NARROW AND SMALL GEOMETRY MOSFETS - A REVIEW [J].
AKERS, LA ;
SANCHEZ, JJ .
SOLID-STATE ELECTRONICS, 1982, 25 (07) :621-641
[2]   CHARGE-SHEET MODEL OF MOSFET [J].
BREWS, JR .
SOLID-STATE ELECTRONICS, 1978, 21 (02) :345-355
[3]  
Burstein E., 1957, SEMICONDUCTOR SURFAC
[4]   INFLUENCE OF SOURCE-DRAIN SERIES RESISTANCE ON MOSFET FIELD-EFFECT MOBILITY [J].
CABONTILL, B ;
GHIBAUDO, G ;
CRISTOLOVEANU, S .
ELECTRONICS LETTERS, 1985, 21 (11) :457-458
[5]  
Fang Z. H., 1986, Noise in Physical Systems and 1/f Noise - 1985. Proceedings of the 8th International Conference on `Noise in Physical Systems' and the 4th International Conference on `1/f Noise', P401
[6]   AN ANALYTICAL MODEL OF CONDUCTANCE AND TRANSCONDUCTANCE FOR DEPLETION-MODE MOS-TRANSISTORS [J].
GHIBAUDO, G .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 103 (01) :317-325
[7]   ANALYTICAL MODELING OF THE TRANSCONDUCTANCE OF SHORT CHANNEL MOSFETS IN THE SATURATION REGION [J].
GHIBAUDO, G .
SOLID-STATE ELECTRONICS, 1989, 32 (01) :87-89
[8]   MODELING OF OHMIC MOSFET OPERATION AT VERY LOW-TEMPERATURE [J].
GHIBAUDO, G ;
BALESTRA, F .
SOLID-STATE ELECTRONICS, 1988, 31 (01) :105-108
[9]   AN ANALYTICAL MODEL OF CONDUCTANCE AND TRANSCONDUCTANCE FOR ENHANCED-MODE MOSFETS [J].
GHIBAUDO, G .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 95 (01) :323-335
[10]   CALCULATION OF SURFACE-CHARGE NOISE AT THE SI-SIO2 INTERFACE [J].
GHIBAUDO, G .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 104 (02) :917-930
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