THE PHYSICS OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS

被引：365
作者：
POWELL, MJ
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 12期
关键词：
D O I：
10.1109/16.40933
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：2753 / 2763
页数：11
相关论文
共 58 条
[1]  
Castleberry D. E., 1988, SID 88, P232
[2]  
CLERC JF, 1986, P INT DISPLAY RES C, P84
[3]  
Credelle T. L., 1988, Conference Record of the 1988 International Display Research Conference (IEEE Cat. No.88-CH-2678-1), P208, DOI 10.1109/DISPL.1988.11313
[4]   AN INVESTIGATION OF THE CONDUCTIVITY PREFACTOR IN A-SI AS A FUNCTION OF FERMI LEVEL POSITION USING THE FIELD-EFFECT EXPERIMENT [J].
DJAMDJI, F ;
LECOMBER, PG .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 56 (01) :31-50
[5]  
Fennell L. E., 1988, Conference Record of the 1988 International Display Research Conference (IEEE Cat. No.88-CH-2678-1), P167, DOI 10.1109/DISPL.1988.11302
[6]   A SIMPLE SCHEME FOR EVALUATING FIELD-EFFECT DATA [J].
GRUNEWALD, M ;
THOMAS, P ;
WURTZ, D .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 100 (02) :K139-K143
[7]   METASTABLE DEFECTS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].
HEPBURN, AR ;
MARSHALL, JM ;
MAIN, C ;
POWELL, MJ ;
VANBERKEL, C .
PHYSICAL REVIEW LETTERS, 1986, 56 (20) :2215-2218
[8]   CHARGE TRAPPING EFFECTS IN AMORPHOUS-SILICON SILICON-NITRIDE THIN-FILM TRANSISTORS [J].
HEPBURN, AR ;
MAIN, C ;
MARSHALL, JM ;
VANBERKEL, C ;
POWELL, MJ .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :903-906
[9]  
HILSUM C, 1986, DISPLAYS JAN, P37
[10]  
Hotta S., 1986, SID DIGEST, P296
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