GALVANOMAGNETIC EFFECTS IN N-TYPE SILICON

被引：16

|

作者：

KRAG, WE

机构：

来源：

PHYSICAL REVIEW | 1960年 / 118卷 / 02期

关键词：

D O I：

10.1103/PhysRev.118.435

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：435 / 450

页数：16

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