GALVANOMAGNETIC EFFECTS IN N-TYPE SILICON

被引：16
|
作者：
KRAG, WE
机构：
来源：
PHYSICAL REVIEW | 1960年 / 118卷 / 02期
关键词：
D O I：
10.1103/PhysRev.118.435
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：435 / 450
页数：16
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