PLASMA ANODIZATION OF GERMANIUM

被引：13

作者：

OHANLON, JF

机构：

[1] IBM Research Center

来源：

APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 04期

关键词：

D O I：

10.1063/1.1652743

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A model is presented for the measurement of the voltage drop across a plasma anodized germanium film. This model proposes that the potential at the plasma - oxide interface is controlled by the plasma. From this model the anodization constant of germanium has been determed to be 31 Å/V. © 1969 The American Institute of Physics.

引用

页码：127 / &

共 4 条

[1] SPUTTERING OF OXIDE FILMS IN PLASMA ANODIZATION OF ALUMINUM
LOCKER, LD
SKOLNICK, LP
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (11) : 396 - &
[2] LOCKER LD, 1968, OCT EL SOC EXT ABSTR
[3] THE FORMATION OF METAL OXIDE FILMS USING GASEOUS AND SOLID ELECTROLYTES
MILES, JL
SMITH, PH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (12) : 1240 - 1245
[4] THE GROWTH OF ANODIC OXIDE FILMS ON GERMANIUM
ZWERDLING, S
SHEFF, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (04) : 338 - 342

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