RADIATION-DAMAGE TEST OF SILICON MULTISTRIP DETECTORS

被引:22
作者
NAKAMURA, M [1 ]
TOMITA, Y [1 ]
NIWA, K [1 ]
KONDO, T [1 ]
机构
[1] KEK,NATL LAB HIGH ENERGY PHYS,IBARAKI 304,JAPAN
关键词
D O I
10.1016/0168-9002(88)90007-1
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:42 / 55
页数:14
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