LOW-ELECTRONEGATIVITY OVERLAYERS AND ENHANCED SEMICONDUCTOR OXIDATION - SM ON SI(111) AND GAAS(110) SURFACES

被引：29
作者：
CHANG, S
PHILIP, P
WALL, A
RAISANEN, A
TROULLIER, N
FRANCIOSI, A
机构：
来源：
PHYSICAL REVIEW B | 1987年 / 35卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.35.3013
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：3013 / 3016
页数：4
相关论文
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