CONDUCTING FILAMENTS AND VOLTAGE-CONTROLLED NEGATIVE-RESISTANCE IN AL-AL2-O3-AU STRUCTURES WITH AMORPHOUS DIELECTRIC

被引：62

作者：

EMMER, I ^{[1
]}

机构：

[1] CHARLES UNIV, DEPT ELECTR & VACUUM PHYS, PRAGUE 2, CZECHOSLOVAKIA

来源：

关键词：

D O I：

10.1016/0040-6090(74)90032-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：43 / 52

页数：10

共 14 条

[1]

BIEDERMAN H, 1972, 5 P CZECH C EL VAC P

[2]

CACHARD A, 1971, CR ACAD SCI B PHYS, V272, P859

[3]

Dearnaley G., 1970, Journal of Non-Crystalline Solids, V4, P593, DOI 10.1016/0022-3093(70)90097-9

DITTMER, G .

[5] Pressure Dependent Switching in Al-Al2O3-Au Structures [J].

Emmer, I. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1970, 3 (03) :K191-K193

[6]

GREENE PD, 1968, THIN FILM DIELECTRIC

[7] LOW-FREQUENCY NEGATIVE RESISTANCE IN THIN ANODIC OXIDE FILMS [J].

HICKMOTT, TW .

[8] POTENTIAL DISTRIBUTION + NEGATIVE RESISTANCE IN THIN OXIDE FILMS [J].

HICKMOTT, TW .

HICKMOTT, TW .

KANTER, H .