HIGH-FREQUENCY MODULATION CHARACTERISTICS OF HYBRID DIELECTRIC/ALGAAS MIRROR SINGLEMODE VCSELS

被引：10
作者：
LEHMAN, JA
MORGAN, RA
HIBBSBRENNER, MK
CARLSON, D
机构：
[1] Honeywell Technology Center, 3660 Technology Drive, Minneapolis
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 15期
关键词：
GALLIUM ARSENIDE; VERTICAL CAVITY SURFACE EMITTING LASERS; DIELECTRIC DEVICES;
D O I：
10.1049/el:19950830
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors have measured the small-signal frequency response characteristics of a GaAs VCSEL (lambda = 835nm) implementing a novel MOVPE-grown AlOaAs/AlAs-TiO2/SiO2, hybrid distributed Bragg reflector used to control emission to a single mode. A small-signal 3dB bandwidth of 12.1 GHz was recorded at a bias level of only 2.8mA. A very high modulation efficiency of 9.5 GHz/root(mA) was measured which is the highest reported for VCSELS or any semiconductor laser of any variety. In addition, large signal measurements were conducted which showed open eye patterns with pre-bias currents of similar to OmA demonstrating the possibility of direct logic-level drive.
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收藏
页码：1251 / 1252
页数：2
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