HEAT-TREATMENT OF GALLIUM-PHOSPHIDE

被引：16

作者：

NISHIZAWA, J

OKUNO, Y

SUTO, K

SATO, T

YAMOKOSHI, S

机构：

[1] TOHOKU UNIV, RES INST ELECT COMMUN, SENDAI, JAPAN

[2] SEMICOND RES INST, SENDAI, JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1974年 / 14卷 / 10期

关键词：

D O I：

10.1016/0038-1098(74)90386-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：889 / 892

页数：4

共 10 条

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[3]

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[4]

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[5] NONSTOICHIOMETRY OF TE-DOPED GAAS [J].

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OTSUKA, H ;

YAMAKOSHI, S ;

ISHIDA, K .

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[6] DEEP LEVELS IN GAP [J].

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NISHIZAWA, J .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) :832-836

[7] ANNEALING OF N-TYPE GAAS UNDER EXCESS ARSENIC VAPOR [J].

OTSUKA, H ;

ISHIDA, K ;

NISHIZAWA, JI .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (05) :632-+

[8]

OTSUKA H, 1968, THIN FILM COMMITTEE

[9] ETUDE DE LEQUILIBRE DE PHASES DANS LE TELLURURE DE MERCURE [J].

RODOT, H .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (01) :85-&

[10] EFFECT OF HEAT TREATMENT ON GALLIUM ARSENIDE CRYSTALS .I. THERMAL CONVERSION IN EXCESS ARSENIC VAPOR [J].

TOYAMA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (08) :1000-&

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