LOW-ENERGY ELECTRON-ENHANCED ETCHING OF SILICON BY HYDROGEN

被引：0
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作者：
STEINER, PA
CHAMBERLAIN, JP
GILLIS, HP
机构：
[1] GEORGIA INST TECHNOL,SCH CHEM,ATLANTA,GA 30332
[2] GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 1993年 / 205卷
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中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
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页码：165 / PHYS
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