INDUCED IMPURITY CONDUCTION IN ZINC-DOPED SILICON

被引：0
作者：
GULAMOVA, MA [1 ]
KARIMOV, , IZ [1 ]
KNIGIN, PI [1 ]
SHOPEN, VI [1 ]
机构：
[1] SV STARODUBTSEV PHYS TECH INST,UZBEK SSR,TASHKENT,UZSSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 6卷 / 10期
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D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
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页码：1762 / 1764
页数：3
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