INDUCED IMPURITY CONDUCTION IN ZINC-DOPED SILICON

被引：0

作者：

GULAMOVA, MA ^{[1
]}

KARIMOV, , IZ ^{[1
]}

KNIGIN, PI ^{[1
]}

SHOPEN, VI ^{[1
]}

机构：

[1] SV STARODUBTSEV PHYS TECH INST,UZBEK SSR,TASHKENT,UZSSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 6卷 / 10期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1762 / 1764

页数：3

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[21] HALL-EFFECT AND IMPURITY CONDUCTION IN SUBSTITUTIONALLY DOPED AMORPHOUS SILICON [J].

LECOMBER, PG ;

JONES, DI ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE, 1977, 35 (05) :1173-1187

[22] PARAMAGNETISM OF PHOSPHORUS DOPED SILICON IN NON-METALLIC IMPURITY CONDUCTION [J].

MAEKAWA, S ;

UE, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 22 (06) :1401-&

[23] LUMINESCENCE OF ZINC-DOPED GALLIUM NITRIDE [J].

MARASINA, LA ;

PIKHTIN, AN ;

PICHUGIN, IG ;

SOLOMONOV, AV .

SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02) :221-223

[24] Radiosensitization induced by zinc-doped hydroxyapatite nanoparticles in breast cancer cells [J].

Yedekci, Yagiz ;

Gedik, Emre ;

Evis, Zafer ;

Dogan, Lale ;

Ozyigit, Gokhan ;

Gurkaynak, Murat .

INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY, 2021, 18 (03) :563-572

[25] RADIATION PROPERTIES OF SILICON METAL-OXIDE-SEMICONDUCTOR STRUCTURES WITH ZINC-DOPED OXIDES [J].

BROZEK, T ;

DIDENKO, PI ;

KIBLIK, VY ;

LOGUSH, OI ;

LITOVCHENKO, VG ;

ROMANOVA, GF .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (10) :5823-5828

[26] Radiation properties of silicon metal-oxide-semiconductor structures with zinc-doped oxides [J].

Brozek, Tomasz ;

Didenko, Piotr I. ;

Kiblik, Vasilij Y. ;

Logush, Oleg I. ;

Litovchenko, Vladimir G. ;

Romanova, Galina F. .

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (10) :5823-5828

[27] ON THE DEFECT STRUCTURE OF ZINC-DOPED ZINC-OXIDE [J].

NEUMANN, G .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (02) :605-612

[28] Impurity conduction in silicon carbide [J].

Krieger, Michael ;

Semmelroth, Kurt ;

Weber, Heiko B. ;

Pensl, Gerhard ;

Rambach, Martin ;

Frey, Lothar .

Silicon Carbide and Related Materials 2006, 2007, 556-557 :367-370

[29] TUNABLE OSCILLATOR BASED ON A P-I-N ZINC-DOPED SILICON DIODE [J].

BOGUN, PV ;

KARPOVA, IV ;

KORNILOV, BV ;

PRIVEZENTSEV, VV .

SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (06) :724-726

[30] DETERMINATION OF THE IMPURITY FROM THE HALL EFFECT AND THE HOLE MOBILITY IN ZINC-DOPED GALLIUM ARSENIDE CRYSTALS. [J].

Gasanli, Sh.M. ;

Emel'yanenko, O.V. ;

Ergakov, V.K. ;

Kesamanly, F.P. ;

Lagunova, T.S. ;

Nasledov, D.N. .

1972, 5 (10) :1641-1644

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