EFFECTS OF HEAVY IMPURITY DOPING ON ELECTRON INJECTION IN P+-N GAAS DIODES

被引：21

作者：

KLAUSMEIERBROWN, ME ^{[1
]}

LUNDSTROM, MS ^{[1
]}

MELLOCH, MR ^{[1
]}

TOBIN, SP ^{[1
]}

机构：

[1] SPIRE CORP,BEDFORD,MA 01730

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 26期

关键词：

D O I：

10.1063/1.99529

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2255 / 2257

页数：3

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[4]

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[6]

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