FAMOS - NEW SEMICONDUCTOR CHARGE STORAGE DEVICE

被引：74

作者：

FROHMANB.D ^{[1
]}

机构：

[1] INTEL CORP,SANTA CLARA,CA 95051

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 06期

关键词：

D O I：

10.1016/0038-1101(74)90169-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：517 / &

共 19 条

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[6]

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[10] A FLOATING GATE AND ITS APPLICATION TO MEMORY DEVICES [J].

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