ELECTRONIC STATES INDUCED BY SURFACE-DEFECTS ON GASB(110)

被引：0

作者：

NISHIDA, M

机构：

来源：

SURFACE SCIENCE | 1980年 / 99卷 / 02期

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D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：L384 / L388

页数：5

共 14 条

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[8] SURFACE SPECTROSCOPY OF SCHOTTKY-BARRIER FORMATION ON SI(111) 7X7 - PHOTOEMISSION STUDIES OF FILLED SURFACE-STATES AND BAND BENDING [J].

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[9]

NISHIDA M, 1978, SURF SCI, V72, P589, DOI 10.1016/0039-6028(78)90349-7

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