SPUTTER-DEPOSITION BY A NEW PENNING-DISCHARGE SOURCE WITH AN AXIALLY INTEGRATED HOT-CATHODE

被引：6

作者：

SHOJI, F

OGAWA, A

OURA, K

机构：

[1] Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka

来源：

APPLIED SURFACE SCIENCE | 1991年 / 48-9卷

关键词：

D O I：

10.1016/0169-4332(91)90360-V

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A hot-cathode Penning-discharge sputtering (HC-PDS) apparatus has been newly developed, which normally operates at an Ar gas pressure of 10(-4) Torr and provides a high-density ion flux even at low target voltages below -0.10 kV. As one performance test, we tried sputter-depositions from Mo, W, and Ta refractory metals. By means of PIXE analysis, it was found that argon was incorporated, but its concentration was estimated to be less than 2 at%, while other impurities coming from the construction materials of the HC-PDS apparatus could be reduced to as low as 1 at%. An attempt was made to fabricate a high-T(c) superconducting Y-Ba-Cu-O film from a single target. A film close to the nominal composition ratio of the target was obtained at lower pressures of around 1 x 10(-3) Torr.

引用

页码：373 / 376

页数：4