TIMING RESPONSE OF SILICON POSITION-SENSITIVE DETECTORS

被引:0
作者
BENNETT, SJ
ENGLAND, JBA
FREER, M
FULTON, BR
MURGATROYD, JT
机构
[1] School of Physics and Space Research, University of Birmingham, Birmingham, B15 2TT
关键词
D O I
10.1016/0168-9002(92)90855-X
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A simple RC-delay line model of a silicon position-sensitive detector has been extended to cover the case when one end of the resistive layer has been terminated. The timing predictions of the model have been compared with heavy-ion experimental data and good agreement is found. The insight provided by the model has been used to improve the measured timing resolution obtained using thin (approximately 35-mu-m) passing detectors by typically a factor of five.
引用
收藏
页码:105 / 112
页数:8
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