OPERATION OF A FULLY INTEGRATED GAAS-ALXGA1-XAS FET-SEED - A BASIC OPTICALLY ADDRESSED INTEGRATED-CIRCUIT

被引：39

作者：

WOODWARD, TK

CHIROVSKY, LMF

LENTINE, AL

DASARO, LA

LASKOWSKI, EJ

FOCHT, M

GUTH, G

PEI, SS

REN, F

PRZYBYLEK, GJ

SMITH, LE

LEIBENGUTH, RE

ASOM, MT

KOPF, RF

KUO, JM

FEUER, MD

机构：

[1] AT&T BELL LABS,BREINIGSVILLE,PA 18036

[2] AT&T BELL LABS,NAPERVILLE,IL 60566

[3] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 06期

关键词：

D O I：

10.1109/68.141986

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We experimentally demonstrate the operation of a fully integrated optoelectronic circuit with optical input and output consisting of a p-i-n photodetector and load resistor, a depletion mode GaAs-AlxGa1-xAs heterostructure field effect transistor (HFET) and self-biased HFET load, together with an output GaAs-AlxGa1-xAs multiple quantum-well optical modulator. All elements have been monolithically integrated within a 50 x 50-mu-m area. A low optical power input causes a modulation of a higher power output, demonstrating optical signal amplification.

引用

页码：614 / 617

页数：4

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