The thermal and environmental stabilities of boron nitride (BN), aluminium nitride (AIN), and silicon nitride (Si3N4) ceramics have been evaluated using thermochemical modelling. The volatility diagrams of these materials have been established at 2000 K. Master volatility diagrams with equilibrium pressure of dominant vapour species at 1400, 1600. 1800 and 2000 K have also been constructed. The phase stability diagrams of BN and Si3N4 have been established to indicate the stability of various oxide and oxynitride phases in equilibrium with these nitrides at different oxygen and nitrogen pressures. These data show that in order to prevent dissociation and volatilization, nitrogen over-pressures are required during processing and/or operation at higher temperatures. Vaporization rate data indicate that under congruently vaporizing conditions, the mass losses of silicon nitride are greatest, followed by those of aluminium nitride and then boron nitride.
机构:
Inst. of Scientific/Industrial Res., Osaka University, Ibaraki, Osaka 567-0047Inst. of Scientific/Industrial Res., Osaka University, Ibaraki, Osaka 567-0047
Kusunose T.
Sung R.-J.
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Inst. of Scientific/Industrial Res., Osaka University, Ibaraki, Osaka 567-0047Inst. of Scientific/Industrial Res., Osaka University, Ibaraki, Osaka 567-0047
Sung R.-J.
Sekino T.
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Inst. of Scientific/Industrial Res., Osaka University, Ibaraki, Osaka 567-0047Inst. of Scientific/Industrial Res., Osaka University, Ibaraki, Osaka 567-0047
Sekino T.
Sakaguchi S.
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Synergy Materials Research Center, Natl Inst of Adv. Indust. Sci./Tech., Moriyama-ku, Nagoya 463-8560Inst. of Scientific/Industrial Res., Osaka University, Ibaraki, Osaka 567-0047
Sakaguchi S.
Niihara K.
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Inst. of Scientific/Industrial Res., Osaka University, Ibaraki, Osaka 567-0047Inst. of Scientific/Industrial Res., Osaka University, Ibaraki, Osaka 567-0047