AN EXAMINATION OF DOUBLE POSITIONING BOUNDARIES AND INTERFACE MISFIT IN BETA-SIC FILMS ON ALPHA-SIC SUBSTRATES

被引：87

作者：

KONG, HS ^{[1
]}

JIANG, BL ^{[1
]}

GLASS, JT ^{[1
]}

ROZGONYI, GA ^{[1
]}

MORE, KL ^{[1
]}

机构：

[1] OAK RIDGE ASSOCIATED UNIV, OAK RIDGE, TN 37831 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 08期

关键词：

D O I：

10.1063/1.341004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2645 / 2650

页数：6

共 20 条

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J].

ADDAMIANO, A ;

SPRAGUE, JA .

APPLIED PHYSICS LETTERS, 1984, 44 (05) :525-527

[2]

ADDAMIANO A, COMMUNICATION

[3]

CARTER CH, 1984, MICROSCOPIC IDENTIFI, V46, P456

[4] INTERFACIAL FREE ENERGY OF COHERENT TWIN BOUNDARIES IN COPPER [J].

FULLMAN, RL .

JOURNAL OF APPLIED PHYSICS, 1951, 22 (04) :448-455

[5] MOIRE PATTERNS AND COHERENT DOUBLE-POSITIONING BOUNDARIES IN [111] EPITAXIAL GOLD FILMS [J].

JACOBS, MH ;

STOWELL, MJ .

PHILOSOPHICAL MAGAZINE, 1965, 11 (111) :591-&

[6] EPITAXIAL GROWTH OF SILICON CARBIDE [J].

JENNINGS, VJ ;

SOMMER, A ;

CHANG, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) :728-&

[7] EPITAXIAL-GROWTH AND CHARACTERIZATION OF BETA-SIC THIN-FILMS [J].

LIAW, P ;

DAVIS, RF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (03) :642-648

[8] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J].

NISHINO, S ;

POWELL, JA ;

WILL, HA .

APPLIED PHYSICS LETTERS, 1983, 42 (05) :460-462

[9] GROWTH AND MORPHOLOGY OF 6H-SIC EPITAXIAL LAYERS BY CVD [J].

NISHINO, S ;

MATSUNAMI, H ;

TANAKA, T .

JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :144-149

[10]

PARSONS JD, 1985, SOLID STATE TECHNOL, V28, P133

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