EPITAXIAL GALLIUM ARSENIDE FILMS WITH A HIGH ELECTRON MOBILITY

被引:0
|
作者
RZHANOV, AV
LISENKER, BS
MARONCHU.IE
MARONCHU.YE
SHERSTYA.AP
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1968年 / 2卷 / 05期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:593 / &
相关论文
共 50 条
  • [1] ANALYSIS OF MOBILITY IN EPITAXIAL GALLIUM-ARSENIDE FILMS
    KRAVCHENKO, AF
    MOROZOV, BV
    SKOK, EM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (11): : 1831 - 1834
  • [2] EPITAXIAL FILMS OF GALLIUM ARSENIDE
    HAGENLOCHER, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (09) : C213 - C213
  • [3] SHALLOW DONOR LEVELS AND HIGH MOBILITY IN EPITAXIAL GALLIUM ARSENIDE
    WHITAKER, J
    BOLGER, DE
    SOLID STATE COMMUNICATIONS, 1966, 4 (04) : 181 - &
  • [4] CORRELATION BETWEEN ELECTRON MOBILITY AND SOME FEATURES OF CATHODOLUMINESCENCE SPECTRA OF EPITAXIAL GALLIUM-ARSENIDE FILMS
    ALEKSAND.GA
    VILKOTSK.VA
    KORNILOV, BV
    MARCHUKO.LV
    SKVORTSO.IM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (02): : 193 - 195
  • [5] EPITAXIAL GALLIUM ARSENIDE THIN FILMS
    STEINBER.RF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1966, 3 (05): : 315 - &
  • [6] EPITAXIAL GALLIUM ARSENIDE THIN FILMS
    STEINBER.RF
    VACUUM, 1967, 17 (03) : 171 - &
  • [7] INFLUENCE OF COPPER IMPURITY ON CARRIER MOBILITY IN EPITAXIAL GALLIUM-ARSENIDE FILMS
    BATAVIN, VV
    MIKHAELYAN, VM
    FEDORENKO, VN
    POPOVA, GV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (01): : 67 - +
  • [8] ELECTRICAL PROPERTIES OF EPITAXIAL GALLIUM ARSENIDE FILMS
    LISENKER, BS
    MARONCHU.IE
    MARONCHU.YE
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (06): : 770 - &
  • [9] ANOMALOUS MAGNITUDE AND TEMPERATURE DEPENDENCE OF MOBILITY OF ELECTRONS IN EPITAXIAL GALLIUM-ARSENIDE FILMS
    ALEKSANDROVA, GA
    VILKOTSK.VA
    SKVORTSOV, IM
    MARCHUKOV, LV
    KORNILOV, BV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (05): : 857 - +
  • [10] Simulation of gallium-arsenide based high electron mobility transistors
    Quay, R
    Massler, H
    Kellner, W
    Grasser, T
    Palankovski, V
    Selberherr, S
    2000 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2000, : 74 - 77