共 50 条
- [1] ANALYSIS OF MOBILITY IN EPITAXIAL GALLIUM-ARSENIDE FILMS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (11): : 1831 - 1834
- [4] CORRELATION BETWEEN ELECTRON MOBILITY AND SOME FEATURES OF CATHODOLUMINESCENCE SPECTRA OF EPITAXIAL GALLIUM-ARSENIDE FILMS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (02): : 193 - 195
- [5] EPITAXIAL GALLIUM ARSENIDE THIN FILMS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1966, 3 (05): : 315 - &
- [7] INFLUENCE OF COPPER IMPURITY ON CARRIER MOBILITY IN EPITAXIAL GALLIUM-ARSENIDE FILMS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (01): : 67 - +
- [8] ELECTRICAL PROPERTIES OF EPITAXIAL GALLIUM ARSENIDE FILMS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (06): : 770 - &
- [9] ANOMALOUS MAGNITUDE AND TEMPERATURE DEPENDENCE OF MOBILITY OF ELECTRONS IN EPITAXIAL GALLIUM-ARSENIDE FILMS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (05): : 857 - +
- [10] Simulation of gallium-arsenide based high electron mobility transistors 2000 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2000, : 74 - 77