EPITAXIAL-GROWTH OF ALN FILM WITH AN INITIAL-NITRIDING LAYER ON ALPHA-AL2O3 SUBSTRATE

被引：72

作者：

KAWAKAMI, H ^{[1
]}

SAKURAI, K ^{[1
]}

TSUBOUCHI, K ^{[1
]}

MIKOSHIBA, N ^{[1
]}

机构：

[1] TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 02期

关键词：

D O I：

10.1143/JJAP.27.L161

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L161 / L163

页数：3

共 24 条

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