PROXIMITY EFFECT CORRECTION FOR X-RAY MASK FABRICATION

被引：6
作者：
KURIYAMA, Y
MORIYA, S
UCHIYAMA, S
SHIMAZU, N
机构：
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1994年 / 33卷 / 12B期
关键词：
ELECTRON-BEAM LITHOGRAPHY; X-RAY MASK; PROXIMITY EFFECT CORRECTION; PARTITIONING; OFFSET ENERGY MAP;
D O I：
10.1143/JJAP.33.6983
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Our conventional proximity effect correction program has been improved to fabricate X-ray masks in a subtractive process. The improved program calculates a correction dose for each exposure pattern, using an offset energy map. Two partitioning steps related to delineation and mesh boundary are introduced to improve the correction accuracy. The mesh size for calculating the offset energy map is determined to be 0.2 mu m at 30 kV to maintain the error in the dose calculation within 4%. Using this program, 0.2-mu m-level LSI patterns can be fabricated even at comparatively low acceleration voltage of 30 kV.
引用
收藏
页码：6983 / 6988
页数：6
相关论文
共 17 条
  • [1] REPRESENTATIVE FIGURE METHOD FOR PROXIMITY EFFECT CORRECTION
    ABE, T
    YAMASAKI, S
    YOSHIKAWA, R
    TAKIGAWA, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (3B): : L528 - L531
  • [2] PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY
    CHANG, THP
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1271 - 1275
  • [3] APPLICATION OF X-RAY-LITHOGRAPHY WITH A SINGLE-LAYER RESIST PROCESS TO SUBQUARTERMICRON LARGE-SCALE INTEGRATED-CIRCUIT FABRICATION
    DEGUCHI, K
    MIYOSHI, K
    BAN, H
    KYURAGI, H
    KONAKA, S
    MATSUDA, T
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06): : 3145 - 3149
  • [4] NEW MODEL OF ELECTRON FREE-PATH IN MULTIPLE LAYERS FOR MONTE-CARLO SIMULATION
    HORIGUCHI, S
    SUZUKI, M
    KOBAYASHI, T
    YOSHINO, H
    SAKAKIBARA, Y
    [J]. APPLIED PHYSICS LETTERS, 1981, 39 (06) : 512 - 514
  • [5] VERIFICATION OF A PROXIMITY EFFECT CORRECTION PROGRAM IN ELECTRON-BEAM LITHOGRAPHY
    KRATSCHMER, E
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1264 - 1268
  • [6] RESOLUTION LIMITS AND PROCESS LATITUDE OF X-RAY MASK FABRICATION
    MCCORD, MA
    WAGNER, A
    DONOHUE, T
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06): : 2958 - 2963
  • [7] MIYOSHI K, 1985, 46TH AUT M JAP SOC A
  • [8] ELECTRON-BEAM DIRECT WRITING TECHNOLOGIES FOR 0.3-MU-M ULSI DEVICES
    MORIIZUMI, K
    TAKEUCHI, S
    FUJINO, T
    AOYAMA, S
    YONEDA, M
    MORIMOTO, H
    WATAKABE, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (11): : 2584 - 2589
  • [9] MORIYA S, 1986, 47TH AUT M JAP SOC A
  • [10] FAST PROXIMITY EFFECT CORRECTION METHOD USING A PATTERN AREA DENSITY MAP
    MURAI, F
    YODA, H
    OKAZAKI, S
    SAITOU, N
    SAKITANI, Y
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06): : 3072 - 3076
12