RESISTIVITIES OF THIN-FILM TRANSITION-METAL SILICIDES

被引：111

作者：

MURARKA, SP

READ, MH

DOHERTY, CJ

FRASER, DB

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 02期

关键词：

D O I：

10.1149/1.2123815

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：293 / 301

页数：9

共 29 条

[1]

CHOW TP, 1979, IEDM, P458

[2] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].

CROWDER, BL ;

ZIRINSKY, S .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :291-293

[3]

ELLIOTT RP, 1965, CONSTITUTION BINA S1

[4]

Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[5]

HUMEROTHERY W, 1951, J I MET, V80, P609

[6]

KEIFFER R, 1963, HARTSTOFFE, P455

[7] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J].

MOCHIZUKI, T ;

SHIBATA, K ;

INOUE, T ;

OHUCHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 :37-42

[8]

MOFFAT WG, 1980, HDB BINARY PHASE DIA

[9] THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON [J].

MURARKA, SP ;

FRASER, DB .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :342-349

[10] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J].

MURARKA, SP ;

FRASER, DB ;

SINHA, AK ;

LEVINSTEIN, HJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1409-1417

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