ANNEALING OF BORON-IMPLANTED CORROSION-RESISTANT COPPER-FILMS

被引：43

作者：

DING, PJ ^{[1
]}

LANFORD, WA ^{[1
]}

HYMES, S ^{[1
]}

MURARKA, SP ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12180 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.354913

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ion implantation can be used effectively to passivate copper. The effect of B ion implantation on the oxidization rate of copper is studied as a function of B energy and dose. The increase of sheet resistance associated with ion implantation damage and with the incorporation of B is studied. It is found that a post-implantation inert gas annealing (at 400-degrees-C for 20 min) removes the increase in sheet resistance caused by implant damage while preserving the passivation effects of the B implant.

引用

页码：1331 / 1334

页数：4

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