OHMIC CONTACTS TO EPITAXIAL PGAAS

[1] CHANG LL, 1964, PHYSICS CHEM SOLIDS, V25, P23

[2] BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2155 - &

[3] HOLLAND L, 1958, VACUUM DEPOSITION TH, P541

[4] VARIATION OF CONTACT RESISTANCE OF METAL-GAAS CONTACTS WITH IMPURITY CONCENTRATION AND ITS DEVICE IMPLICATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) : 507 - &

[5] LIBOV LD, 1965, INSTRUM EXP TECH USS, V4, P746

[6] MARTINO H, 1969, J ELECTROCHEM SOC, V116, P709

[7] METAL-SEMICONDUCTOR SURFACE BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1023 - &

[8] ELECTRON TUNNELING AND CONTACT RESISTANCE OF METAL-SILICON CONTACT BARRIERS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (02) : 239 - +

[1] CHANG LL, 1964, PHYSICS CHEM SOLIDS, V25, P23

[2] BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2155 - &

[3] HOLLAND L, 1958, VACUUM DEPOSITION TH, P541

[4] VARIATION OF CONTACT RESISTANCE OF METAL-GAAS CONTACTS WITH IMPURITY CONCENTRATION AND ITS DEVICE IMPLICATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) : 507 - &

[5] LIBOV LD, 1965, INSTRUM EXP TECH USS, V4, P746

[6] MARTINO H, 1969, J ELECTROCHEM SOC, V116, P709

[7] METAL-SEMICONDUCTOR SURFACE BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1023 - &

[8] ELECTRON TUNNELING AND CONTACT RESISTANCE OF METAL-SILICON CONTACT BARRIERS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (02) : 239 - +