METASTABLE DEFECT STRUCTURES IN ELEMENTAL AND COMPOUND SEMICONDUCTORS

[1] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955

[2] INTERSTITIAL DEFECT REACTIONS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1987, 51 (04) : 256 - 258

[3] Benton J. L., 1988, Defects in Electronic Materials. Symposium, P85

[4] BENTON JL, 1983, DEFECTS SEMICONDUCTO, V2, P95

[5] BOIS D, 1977, J PHYS LETT, V38, P351

[6] CONFIGURATIONALLY MULTISTABLE DEFECT IN SILICON [J]. APPLIED PHYSICS LETTERS, 1986, 48 (15) : 1000 - 1002

[7] METASTABLE-DEFECT BEHAVIOR IN SILICON - CHARGE-STATE-CONTROLLED REORIENTATION OF IRON-ALUMINUM PAIRS [J]. PHYSICAL REVIEW B, 1985, 31 (12): : 7979 - 7988

[8] CHANTRE A, 1986, DEFECTS SEMICONDUCTO, P387

[9] EFFECT OF TE AND S DONOR LEVELS ON PROPERTIES OF GAAS1-XPX NEAR DIRECT-INDIRECT TRANSITION [J]. PHYSICAL REVIEW, 1968, 168 (03): : 867 - &

[10] SULFUR-RELATED TRAP IN GAAS1-XPX [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6334 - 6343

[1] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955

[2] INTERSTITIAL DEFECT REACTIONS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1987, 51 (04) : 256 - 258

[3] Benton J. L., 1988, Defects in Electronic Materials. Symposium, P85

[4] BENTON JL, 1983, DEFECTS SEMICONDUCTO, V2, P95

[5] BOIS D, 1977, J PHYS LETT, V38, P351

[6] CONFIGURATIONALLY MULTISTABLE DEFECT IN SILICON [J]. APPLIED PHYSICS LETTERS, 1986, 48 (15) : 1000 - 1002

[7] METASTABLE-DEFECT BEHAVIOR IN SILICON - CHARGE-STATE-CONTROLLED REORIENTATION OF IRON-ALUMINUM PAIRS [J]. PHYSICAL REVIEW B, 1985, 31 (12): : 7979 - 7988

[8] CHANTRE A, 1986, DEFECTS SEMICONDUCTO, P387

[9] EFFECT OF TE AND S DONOR LEVELS ON PROPERTIES OF GAAS1-XPX NEAR DIRECT-INDIRECT TRANSITION [J]. PHYSICAL REVIEW, 1968, 168 (03): : 867 - &

[10] SULFUR-RELATED TRAP IN GAAS1-XPX [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6334 - 6343