TRAP GENERATION AND OCCUPATION IN STRESSED GATE OXIDES UNDER SPATIALLY-VARIABLE OXIDE ELECTRIC-FIELD

被引：8
作者：
AVNI, E
SHAPPIR, J
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 22期
关键词：
D O I：
10.1063/1.98493
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1857 / 1859
页数：3
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