CAUGHEY-THOMAS PARAMETERS FOR ELECTRON-MOBILITY CALCULATIONS IN GAAS

被引:11
作者
MAZIAR, CM
LUNDSTROM, MS
机构
[1] Purdue Univ, West Lafayette, IN, USA, Purdue Univ, West Lafayette, IN, USA
关键词
D O I
10.1049/el:19860384
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
5
引用
收藏
页码:565 / 566
页数:2
相关论文
共 5 条
[1]   CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J].
CAUGHEY, DM ;
THOMAS, RE .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12) :2192-+
[2]  
HOPFEL R, 1986, PHYS REV LETT, V56, P756
[3]   OPEN-CIRCUIT VOLTAGE ENHANCEMENT IN GRADED BANDGAP ALXGA1-X AS SOLAR-CELLS [J].
SCHUELKE, RJ ;
MAZIAR, CM ;
LUNDSTROM, MS .
SOLAR CELLS, 1985, 15 (01) :73-86
[4]   ELECTRON-MOBILITY AND FREE-CARRIER ABSORPTION IN GAAS - DETERMINATION OF THE COMPENSATION RATIO [J].
WALUKIEWICZ, W ;
LAGOWSKI, L ;
JASTRZEBSKI, L ;
LICHTENSTEIGER, M ;
GATOS, HC .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :899-908
[5]   MINORITY-CARRIER MOBILITY IN P-TYPE GAAS [J].
WALUKIEWICZ, W ;
LAGOWSKI, J ;
JASTRZEBSKI, L ;
GATOS, HC .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :5040-5042