CHARACTERIZATION OF MOLECULAR-BEAM EPITAXIALLY GROWN HGCDTE EPILAYERS BY MIDINFRARED INTERBAND MAGNETOABSORPTION

Interband magneto-absorption is used to characterize molecular beam epitaxially (MBE) grown HgCdTe epilayers. Both the bandgap and the Moss-Burstein shift in n-doped layers are determined from the experiments. A heterostructure sample consisting of four layers with different compositions is also analyzed. Due to the good experimental sensitivity all four bandgaps are determined, in contrast to optical transmission analysis without a magnetic field where only the lowest gap is readily visible. the interband magneto-absorption signal strongly depends on the electron mobility. This has been used as an aid to optimizing the MBE growth conditions of HgCdTe layers on different substrate orientations.