10TH-MICRON POLYSILICON THIN-FILM TRANSISTORS

被引：13
作者：
WATTS, RK
LEE, JTC
机构：
[1] AT & T Bell Lab, Murray Hill, NJ
来源：
IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 11期
关键词：
D O I：
10.1109/55.258000
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Small thin-film polysilicon transistors are of interest for load devices in static random-access memory (SRAM) cells of the near future. We present measured characteristics of thin-film transistors (TFT's) with gate lengths ranging from 7 to 0.12 mum made in large-grain polysilicon.
引用
收藏
页码：515 / 517
页数：3
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