INTERFACE STATES AT SILICON GRAIN-BOUNDARIES

被引：0

|

作者：

WERNER, JH

机构：

来源：

STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989 | 1989年 / 104卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：63 / 74

页数：12

相关论文

共 50 条

[31] CURRENT NOISE OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON
TKACHENKO, NN
KOLOMOETS, GP
FEDOTOV, AK
ILYASHUK, YM
SNAPIRO, IB
FIZIKA TVERDOGO TELA, 1991, 33 (05): : 1593 - 1595
[32] GRAIN-BOUNDARIES ANALYSIS IN POLYCRYSTALLINE SILICON BY TEM
KOMNINOU, F
KARAKOSTAS, T
BLERIS, GL
ECONOMOU, NA
JOURNAL DE PHYSIQUE, 1982, 43 (NC1): : 9 - 14
[33] ELECTRONIC-PROPERTIES OF SILICON GRAIN-BOUNDARIES
PIKE, GE
SEAGER, CH
AMERICAN CERAMIC SOCIETY BULLETIN, 1980, 59 (03): : 333 - 333
[34] RECRYSTALLIZATION ON GRAIN-BOUNDARIES OF SILICON-IRON
GOLDSHTEYN, VY
VERBOVETSKAYA, DE
FIZIKA METALLOV I METALLOVEDENIE, 1977, 44 (03): : 558 - 565
[35] HYDROGEN MOTION AND BONDING IN SILICON GRAIN-BOUNDARIES
SEAGER, CH
PANITZ, JKG
SHARP, DJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C86 - C86
[36] TEM OBSERVATIONS ON GRAIN-BOUNDARIES IN SINTERED SILICON
FOLL, H
AST, D
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1979, 40 (05): : 589 - 610
[37] EFFECTS OF INTERFACE-POTENTIAL NONUNIFORMITIES ON CARRIER TRANSPORT ACROSS SILICON GRAIN-BOUNDARIES
THOMSON, DJ
CARD, HC
JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 1976 - 1980
[38] IMPURITY STATES AND DIFFUSION IN GRAIN-BOUNDARIES OF METALS
KLOTSMAN, SM
USPEKHI FIZICHESKIKH NAUK, 1990, 160 (01): : 99 - 139
[39] DIRECT MEASUREMENT OF ELECTRON-EMISSION FROM DEFECT STATES AT SILICON GRAIN-BOUNDARIES
SEAGER, CH
PIKE, GE
GINLEY, DS
PHYSICAL REVIEW LETTERS, 1979, 43 (07) : 532 - 535
[40] ENHANCED DIFFUSION OF PHOSPHORUS AT GRAIN-BOUNDARIES IN MULTICRYSTALLINE SILICON
SCHIMPF, K
PALM, J
ALEXANDER, H
CRYSTAL RESEARCH AND TECHNOLOGY, 1994, 29 (08) : 1123 - 1129

← 1 2 3 4 5 →