THEORETICAL TREATMENT OF CASCADE MIXING IN DEPTH PROFILING BY SPUTTERING

被引:81
作者
HOFER, WO [1 ]
LITTMARK, U [1 ]
机构
[1] UNIV COPENHAGEN,HC ORSTED INST,DK-2100 COPENHAGEN O,DENMARK
关键词
D O I
10.1016/0375-9601(79)90635-2
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
An analytic expression for mixing in recoil cascades is discussed with particular emphasis on in-depth concentration profiling. Examples presented show that an asymmetric distortion is not necessarily a consequence of direct recoil implantation or an anisotropic velocity distribution. © 1979.
引用
收藏
页码:457 / 460
页数:4
相关论文
共 12 条
[1]   DEPTH RESOLUTION OF SPUTTER PROFILING [J].
ANDERSEN, HH .
APPLIED PHYSICS, 1979, 18 (02) :131-140
[2]  
HEINEN H, 1964, Z ANGEW PHYS, V17, P356
[3]   ELECTRONIC APERTURE FOR IN-DEPTH ANALYSIS OF SOLIDS WITH AN ION MICROPROBE [J].
HOFER, WO ;
LIEBL, H ;
ROOS, G ;
STAUDENMAIER, G .
INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES, 1976, 19 (03) :327-334
[4]   DEPTH-PROFILING OF CU-NI SANDWICH SAMPLES BY SECONDARY ION MASS-SPECTROMETRY [J].
HOFER, WO ;
LIEBL, H .
APPLIED PHYSICS, 1975, 8 (04) :359-360
[5]  
HOFKER WK, 1975, RAD EFF, V25, P206
[6]  
ISHITANI T, 1975, APPL PHYS, V6, P241, DOI 10.1007/BF00883758
[7]   MOMENTUM DEPOSITION BY HEAVY-ION BOMBARDMENT AND AN APPLICATION TO SPUTTERING [J].
LITTMARK, U ;
SIGMUND, P .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (03) :241-245
[8]   SUPER RANGES OF FAST IONS IN COPPER SINGLE CRYSTALS [J].
LUTZ, H ;
SIZMANN, R .
PHYSICS LETTERS, 1963, 5 (02) :113-114
[9]  
Schulz F., 1973, Radiation Effects, V18, P211, DOI 10.1080/00337577308232124
[10]   THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS [J].
SIGMUND, P .
PHYSICAL REVIEW, 1969, 184 (02) :383-+