INTERFACE CHARACTERISTICS OF THERMAL SIO2 ON SIC

被引：28
作者：
KEE, RW
GEIB, KM
WILMSEN, CW
FERRY, DK
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期
关键词：
D O I：
10.1116/1.569779
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1520 / 1523
页数：4
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共 21 条
[1]  
BALLARD AH, 1932, T ELECTROCHEM SOC, V61, P233
[2]  
BULBRANSEN EA, 1966, J ELECTROCHEM SOC, V113, P1311
[3]  
BURGER RM, 1967, FUNDAMENTALS SILICON
[4]   HOT-ELECTRON MICROWAVE CONDUCTIVITY OF WIDE BANDGAP SEMICONDUCTORS [J].
DAS, P ;
FERRY, DK .
SOLID-STATE ELECTRONICS, 1976, 19 (10) :851-855
[5]   CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].
DEAL, BE ;
SKLAR, M ;
GROVE, AS ;
SNOW, EH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+
[6]   OXIDATION BEHAVIOR OF SILICON CARBIDE [J].
ERVIN, G .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1958, 41 (09) :347-352
[7]   HIGH-FIELD TRANSPORT IN WIDE-BAND-GAP SEMICONDUCTORS [J].
FERRY, DK .
PHYSICAL REVIEW B, 1975, 12 (06) :2361-2369
[8]  
FITZER E, 1973, 3RD P INT C SIL CARB, P320
[9]  
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[10]  
HARRIS RCA, 1973, 3RD P INT C SIC, P329
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