A STUDY OF VANADIUM AS DIFFUSION BARRIER BETWEEN ALUMINUM AND GADOLINIUM SILICIDE CONTACTS

被引：30

作者：

EIZENBERG, M ^{[1
]}

THOMPSON, RD ^{[1
]}

TU, KN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 10期

关键词：

D O I：

10.1063/1.330030

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6891 / 6897

页数：7

共 10 条

[1]

[Anonymous], 1978, HDB BINARY PHASE DIA

[2] MICROSTRUCTURE AND SCHOTTKY-BARRIER HEIGHT OF IRIDIUM SILICIDES FORMED ON SILICON [J].

OHDOMARI, I ;

KUAN, TS ;

TU, KN .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :7020-7029

[3] PARALLEL SILICIDE CONTACTS [J].

OHDOMARI, I ;

TU, KN .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3735-3739

[4]

Runnalls O.J.C., 1963, J MET, V15, P687

[5] SCHOTTKY CONTACTS OF GD-PT AND GD-V ALLOYS ON N-SI AND P-SI [J].

THOMPSON, R ;

EIZENBERG, M ;

TU, KN .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6763-6768

[6] CONTACT REACTION BETWEEN SI AND RARE-EARTH-METALS [J].

THOMPSON, RD ;

TSAUR, BY ;

TU, KN .

APPLIED PHYSICS LETTERS, 1981, 38 (07) :535-537

[7] LOW SCHOTTKY-BARRIER OF RARE-EARTH SILICIDE ON N-SI [J].

TU, KN ;

THOMPSON, RD ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1981, 38 (08) :626-628

[8]

ASTM7399 CARD

[9]

ASTM2934 CARD

[10]

ASTM2999 CARD

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