IMAGE FORCE EFFECTS ON CARRIER COLLECTION IN A-SI-H SOLAR-CELLS

被引：6

作者：

HAN, MK ^{[1
]}

ANDERSON, WA ^{[1
]}

LAHRI, R ^{[1
]}

COLEMAN, J ^{[1
]}

机构：

[1] PLASMA PHYS CORP, LOCUST VALLEY, NY 11560 USA

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 04期

关键词：

D O I：

10.1063/1.92708

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：325 / 327

页数：3

共 12 条

[1]

CARLSON DE, 1979, AMORPHOUS SEMICONDUC

[2]

DEBENEY BT, 1978, SOLID STATE ELECTRON, V2, P515

[3] DEPLETION LAYER COLLECTION EFFICIENCY FOR P-N-JUNCTION, SCHOTTKY DIODE, AND SURFACE INSULATOR SOLAR CELLS [J].

GREEN, MA .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :547-554

[4]

HAN MK, 1980, XS980419 US DEP EN F

[5]

HAN MK, UNPUBLISHED

[6]

SZE SM, 1969, PHYSICS SEMICONDUCTO

[7]

THEKAEKARA MP, 1974, DATA INCIDENT SOLAR

[8] ELECTRON-TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON - DRIFT MOBILITY AND JUNCTION CAPACITANCE [J].

TIEDJE, T ;

WRONSKI, CR ;

ABELES, B ;

CEBULKA, JM .

SOLAR CELLS, 1980, 2 (03) :301-318

[9] DEEP HOLE TRAPS IN HIGH-EFFICIENCY SHOTTKY BARRIER SOLAR-CELLS ON SPUTTERED AMORPHOUS-SILICON AS EVIDENCED BY SPECTRAL RESPONSE AND THERMALLY STIMULATED CURRENT MEASUREMENTS [J].

VIEUXROCHAZ, L ;

CHENEVASPAULE, A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :737-742

[10] INTERPRETATION OF THE CONDUCTANCE AND CAPACITANCE FREQUENCY-DEPENDENCE OF HYDROGENATED AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES [J].

VIKTOROVITCH, P ;

MODDEL, G .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4847-4854

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