ELECTRON-STATES AT SEMICONDUCTOR INTERFACES - THE INTRINSIC AND EXTRINSIC CHARGE NEUTRALITY LEVELS

被引：6
作者：
FLORES, F
PEREZ, R
RINCON, R
SAIZPARDO, R
机构：
来源：
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES | 1993年 / 344卷 / 1673期
关键词：
D O I：
10.1098/rsta.1993.0109
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
A discussion is presented on the semiconductor interface barrier formation. Schottky barriers and heterojunction band offsets are analysed by means of the intrinsic and extrinsic charge neutrality levels. These levels are shown to be controlled by the interface geometry and its local chemistry. The chemical properties and the charge neutrality levels of different Schottky barriers are presented. Heterojunction band offsets are also analysed and are shown to depend on the electronegativity of the metal intralayers deposited at the interface: more electronegative metal atoms tend to reduce the heterojunction band offsets.
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页码：567 / 577
页数：11
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