PREPARATION OF A HIGH-JC Y-BA-CU-O FILM AT 700-DEGREES-C BY THERMAL CHEMICAL VAPOR-DEPOSITION

被引:23
作者
YAMANE, H [1 ]
HIRAI, T [1 ]
WATANABE, K [1 ]
KOBAYASHI, N [1 ]
MUTO, Y [1 ]
HASEI, M [1 ]
KUROSAWA, H [1 ]
机构
[1] RIKEN CO,KUMAGAYA 360,JAPAN
关键词
D O I
10.1063/1.347491
中图分类号
O59 [应用物理学];
学科分类号
摘要
A high-J(c) Y-Ba-Cu-O superconducting film was successfully prepared at 700-degrees-C on a SrTiO3 (100) single-crystal substrate without postannealing by thermal chemical vapor deposition under a low-oxygen partial pressure of 0.036 Torr in the total gas introduced into a hot-wall-type reactor (total gas pressure: 10 Torr), using 1% O2 balanced with Ar as a reactant gas. The sources for the elements of Ba, Y, and Cu were beta-diketone metal chelates. The film mainly consisted of YBa2Cu3Ox with c-axis orientation perpendicular to the substrate plane and included small amounts of a-axis oriented and randomly oriented grains. The film showed the superconducting transition temperature defined by zero resistivity at 89 K. The critical current density based on a 2-mu-V/cm criterion was 2.2 X 10(6) A/cm2 at 77.3 K and 0 T.
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页码:7948 / 7950
页数:3
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