CALCULATION OF SOLID-PHASE REACTION-RATES INDUCED BY A SCANNING CW LASER

被引:28
作者
GOLD, RB
GIBBONS, JF
机构
关键词
D O I
10.1063/1.327702
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1256 / 1258
页数:3
相关论文
共 12 条
[1]   CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J].
AUSTON, DH ;
GOLOVCHENKO, JA ;
SMITH, PR ;
SURKO, CM ;
VENKATESAN, TNC .
APPLIED PHYSICS LETTERS, 1978, 33 (06) :539-541
[2]   SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].
CSEPREGI, L ;
KENNEDY, EF ;
MAYER, JW ;
SIGMON, TW .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911
[3]  
DVURECHENSKY AV, 1979, AIP C P, V50, P245
[4]   STUDY OF THE MECHANISM OF CW LASER ANNEALING OF ARSENIC-IMPLANTED SILICON [J].
GAT, A ;
LIETOILA, A ;
GIBBONS, JF .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) :2926-2929
[5]   PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J].
GAT, A ;
GIBBONS, JF ;
MAGEE, TJ ;
PENG, J ;
DELINE, VR ;
WILLIAMS, P ;
EVANS, CA .
APPLIED PHYSICS LETTERS, 1978, 32 (05) :276-278
[6]  
Ho C. Y., 1974, J PHYS CHEM REF D S1, V3, P1
[7]   THERMAL RESISTANCE OF HEAT SINKS WITH TEMPERATURE-DEPENDENT CONDUCTIVITY [J].
JOYCE, WB .
SOLID-STATE ELECTRONICS, 1975, 18 (04) :321-322
[8]   TEMPERATURE RISE INDUCED BY A LASER-BEAM .2. NON-LINEAR CASE [J].
LAX, M .
APPLIED PHYSICS LETTERS, 1978, 33 (08) :786-788
[9]   TEMPERATURE RISE INDUCED BY A LASER-BEAM [J].
LAX, M .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3919-3924
[10]   LASER ANNEALING FOR SOLID-PHASE THIN-FILM REACTIONS [J].
LIAU, ZL ;
TSAUR, BY ;
MAYER, JW .
APPLIED PHYSICS LETTERS, 1979, 34 (03) :221-223