DISTRIBUTION OF IMPURITIES IN ZN, O-DOPED GAP LIQUID PHASE EPITAXY LAYERS

被引：32

作者：

SAUL, RH

HACKETT, WH

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1970年 / 117卷 / 07期

关键词：

D O I：

10.1149/1.2407684

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：921 / &

共 16 条

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[10] PREPARATION AND PROPERTIES OF SOLUTION-GROWN EPITAXIAL P-N JUNCTIONS IN GAP [J].

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