POLARIZED BAND-EDGE PHOTOLUMINESCENCE AND ORDERING IN GA0.52IN0.48P

被引:162
作者
MASCARENHAS, A
KURTZ, S
KIBBLER, A
OLSON, JM
机构
关键词
D O I
10.1103/PhysRevLett.63.2108
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:2108 / 2111
页数:4
相关论文
共 15 条
[1]   CHEMICAL ORDERING IN GAXIN1-XP SEMICONDUCTOR ALLOY GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].
BELLON, P ;
CHEVALIER, JP ;
MARTIN, GP ;
DUPONTNIVET, E ;
THIEBAUT, C ;
ANDRE, JP .
APPLIED PHYSICS LETTERS, 1988, 52 (07) :567-569
[2]   ORDERING OF ISOVALENT INTERSEMICONDUCTOR ALLOYS [J].
BERNARD, JE ;
FERREIRA, LG ;
WEI, SH ;
ZUNGER, A .
PHYSICAL REVIEW B, 1988, 38 (09) :6338-6341
[3]   DISORDERING OF THE ORDERED STRUCTURE IN METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWN GA0.5IN0.5P ON (001) GAAS SUBSTRATES BY ZINC DIFFUSION [J].
DABKOWSKI, FP ;
GAVRILOVIC, P ;
MEEHAN, K ;
STUTIUS, W ;
WILLIAMS, JE ;
SHAHID, MA ;
MAHAJAN, S .
APPLIED PHYSICS LETTERS, 1988, 52 (25) :2142-2144
[4]  
DYMNIKOV VD, 1976, J EXP THEOR PHYS+, V44, P1252
[5]   STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE [J].
GOMYO, A ;
KOBAYASHI, K ;
KAWATA, S ;
HINO, I ;
SUZUKI, T ;
YUASA, T .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :367-373
[6]   OBSERVATION OF STRONG ORDERING IN GAXIN1-XP ALLOY SEMICONDUCTORS [J].
GOMYO, A ;
SUZUKI, T ;
IIJIMA, S .
PHYSICAL REVIEW LETTERS, 1988, 60 (25) :2645-2648
[7]  
GORAL JP, 1988, MATER RES SOC S P, V102, P583
[8]   RAMAN MICROPROBE DETERMINATION OF LOCAL CRYSTAL ORIENTATION IN LASER ANNEALED SILICON [J].
HOPKINS, JB ;
FARROW, LA ;
FISANICK, GJ .
APPLIED PHYSICS LETTERS, 1984, 44 (05) :535-537
[9]   ELECTROREFLECTANCE AND PHOTOREFLECTANCE OF GAINP [J].
KURTZ, SR ;
OLSON, JM ;
KIBBLER, A .
SOLAR CELLS, 1988, 24 (3-4) :307-312
[10]  
Landau L.D., 1969, STATISTICAL PHYSICS