OXIDATION KINETICS OF POWDERED SILICON NITRIDE

被引：43

作者：

HORTON, RM

机构：

[1] Department of Metallurgy, Washington State University, Pullman, Washington

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1969年 / 52卷 / 03期

关键词：

D O I：

10.1111/j.1151-2916.1969.tb11195.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The oxidation kinetics of powdered silicon nitride were studied in dry oxygen and dry air at 1 atm pressure between 1065° and 1340°C. An automatic recording electrobalance was used to measure the weight gain as a function of time. Parabolic oxidation kinetics were observed with an activation energy of 61 kcal/mol in dry oxygen and 68 kcal/mol in dry air. The oxidation rate in dry oxygen was approximately twice that in air. The solid oxidation product was tridymite above 1125°C and amorphous silica at 1067°C. Copyright © 1969, Wiley Blackwell. All rights reserved

引用

页码：121 / +

页数：1

共 23 条

[1] OXIDATION OF SILICON CARBIDE IN THE TEMPERATURE RANGE 1200-DEGREES TO 1500-DEGREES [J].